UTC友顺 19N10 100V N沟道MOS管 深圳市科瑞芯电子

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型号：19N10

封装：多种封装

品牌：UTC/友顺

100V N-Channel MOSFET

DESCRIPTION

The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FEATURES

* RDS(ON) = 0.1 Ω @VGS = 10 V

* Ultra low gate charge ( typical 19nC )  

* Low reverse transfer Capacitance ( CRSS = typical 32pF )

* Fast switching capability

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness